c opyright ruichips semiconductor co . , ltd r ev . a C mar ., 2012 www. ruichips .com ru 1h36 s n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 10 0 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 32 a mounted on large heat s ink i d p 300 s pulse drain current tested t c =25 c 128 a i d continuous drain current ( v gs =10v) t c =25 c 32 a t c =100 c 23 p d maximum power dissipation t c =25 c 79 w t c = 100 c 39 w r q jc thermal resistance - junction to case 1. 9 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 64 m j ? 10 0 v/ 3 2 a, r ds ( on ) = 34 m ( t y p .)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? d c - dc converters ? synchronous rectifier absolute maximum ratings n - channel mosfe t to - 263
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 2 www. ruichips .com ru 1h36 s electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 1h36 s unit min. typ. max. static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 100 v i dss zero gate voltage drain current v ds = 100 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 3 0 a 34 40 m w notes : pulse width limited by safe operating area. limited by t jmax , i as = 16 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 3 0 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 3 0 a, dl sd /dt=100a/ m s 3 2 ns q rr reverse recovery charge 45 nc dynamic characte ristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1 w c iss input capacitance v gs =0v, v ds = 50 v, frequency=1.0mhz 160 0 pf c oss output capacitance 23 0 c rss reverse transfer capacitance 95 t d ( on ) turn - on delay time v dd = 5 0 v, r l = 1 .7 w , i ds = 30 a, v ge n =10v, r g = 4.7 w 1 4 ns t r turn - on rise time 9 5 t d ( off ) turn - off delay time 5 3 t f turn - off fall time 26 gate charge characteristics q g total gate charge v ds = 80 v, v gs =10v, i ds = 3 0 a 2 8 nc q gs gate - source charge 9 q gd gate - drain charge 8
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 3 www. ruichips .com ru 1h36 s typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impe dance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 4 www. ruichips .com ru 1h36 s typical characteristics output characteristics drain - source on resistanc e i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 5 www. ruichips .com ru 1h36 s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 6 www. ruichips .com ru 1h36 s avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 7 www. ruichips .com ru 1h36 s ordering and marking information device marking package packaging quantity reel size tape width ru 1h36 s ru 1h36 s to - 263 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 8 www. ruichips .com ru 1h36 s package information to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 201 2 9 www. ruichips .com ru 1h36 s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor rela tions contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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